Dmitri Nikolayevich Nasledov (12.08.1903-8.01.1975) was a Soviet physicist. He was born in Kiev. He graduated from Kiev University (1924). In 1924-30 he worked at the Ukrainian Institute of Roentgenology, and from 1930 — at the Leningrad Physico-Technical Institute and the Polytechnic Institute (professor from 1934). His research concerned the physics and technology of semiconductors and solid-state physics. He carried out extensive studies of compounds of the AIII - BV type. He developed a technology for producing single crystals of gallium arsenide and indium arsenide and p-n junctions based on them, and studied the electrical, optical, photoelectric and luminescent properties of the new materials. He created photoelectric converters of solar energy with a high efficiency, highly sensitive radiation detectors for various regions of the spectrum, and tunnel diodes. In 1962 he pointed out the possibility of stimulated emission from a p —n junction in gallium arsenide and observed it. Lenin Prize (1964). USSR State Prize (1974).